Positive Photore​sists

For UV Lithography

▷ Material Attributes

· Film thickness up to 60 μm in one spin-coating step

· Broadband-, g- and i-line exposure

· High stability in acid and alkaline plating baths

· High dry and wet etch resistance

· Good thermal stability of the resist patterns attainable

· Aqueous alkaline development

· Side wall angle up to 87° with mask aligner broadband exposure

· Suitable for pattern reflow

▷ Material Uses

· Etch mask - metals and semiconductors

· Mould for electroplating

· Fabrication of micro optical components, e.g. micro lenses by pattern transfer from reflowed resist patterns

· Mask for ion implantation

※ Compatible Developer: ma-D 331, 331/S (NaOH​ based)

                             mr-D 526/S (TMAH based)