Negative Photore​sists

For Conventional Pattern Transfer and Single Layer Lift-Off

▷ Material Attributes​​

· Resists available in a variety of viscosities

· Aqueous alkaline development

· Tunable pattern profile: vertical to undercut

· High wet and dry etch resistance

· Good thermal stability of the resist pattern

· Easy to remove

▷ Material Uses​

· Microelectronics and micro systems technology

· Mask for lift-off processes

· Etch mask for semiconductors and metals

· Well suitable for implantation

· Mould for electroplating​

※ Compatible Developer: ma-N 400

                              ma-D 331/S, 332/S (NaOH​ based)

                              ma-D 530/S, 531/S, 532/S (TMAH based)

                    ​         ma-N 1400​​

                              ma-D 533/S (TMAH based)