Negative Photore​sists

High E-beam sensitivity

▷ Material Attributes​

· E-beam sensitivity: 2 - 5 μC/cm2 @ 10 keV

                        4 - 6 μC/cm2 @ 20 keV

                       20 - 40 μC/cm2 @ 50 keV

· Post exposure bake (PEB) necessary

· Development in organic solvents

· Excellent thermal stability of the resist patterns

· High wet and dry etch resistance

· Resolution capability: 80 nm

▷ Material uses

· Use in micro- and nanoelectronics

· Manufacturing of semiconductor devices

· Mask for etching, e.g. of Si, SiO2, Si3N4 or metals

· Generation of stamps with nanopatterns​

※ Compatible Developer: mr-Dev 600