product
SEMICONDUCTOR DIVISION

mr-EBL 6000 요약정보 및 구매

제조사 Micro Resist Technology
원산지 Germany
브랜드 ma-EBL series
모델 ma-EBL 6000.1~6000.5

제품 상세설명

Negative Photoresists

High E-beam sensitivity

▷ Material Attributes

· E-beam sensitivity: 2 - 5 μC/cm2 @ 10 keV

                        4 - 6 μC/cm2 @ 20 keV

                       20 - 40 μC/cm2 @ 50 keV

· Post exposure bake (PEB) necessary

· Development in organic solvents

· Excellent thermal stability of the resist patterns

· High wet and dry etch resistance

· Resolution capability: 80 nm


▷ Material uses

· Use in micro- and nanoelectronics

· Manufacturing of semiconductor devices

· Mask for etching, e.g. of Si, SiO2, Si3N4 or metals

· Generation of stamps with nanopatterns​

 

※ Compatible Developer: mr-Dev 600

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