Lift-off Resistor & polydimethylglutarimide polymer
▣ Won’t intermix when over-coated with imaging resists▣ Compatible with g, h, i-line, DUV, 193nm and E-beam resists.
▣ Superior adhesion to Si, NiFe, GaAs, InP and many other III-V materials.
▣ Single step development of bi-layer stack in TMAH, or KOH developers
▣ High thermal stability: Tg ~190 C
▣ Removes quickly and cleanly in conventional resist strippers
▣ Enables high yield, very thick (>3µm) metal lift-off processing
▣ Sub 0.25μm lift-off processing.
▣ Film thicknesses for depositions from <20nm - >5μm.
▣ Excellent conformal and/or planarizing formulation’s available.
▣ Optically transparent formulations available.
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