Negative Photore​sists​

For Thin Film E-Beam and Deep UV Lithography​

▷ Material Attributes

· Resists available in a variety of viscosities

· Aqueous alkaline development

· Excellent pattern resolution - down to 30 nm

· High wet and dry etch resistance

· Good thermal stability

· Easy to remove

▷ Material Uses

· Manufacturing of semiconductor devices

· Use in micro- and nanoelectronics

· Mask for etching, e.g. Si, SiO2, Si3N4 or metals

· Mask for ion implantation

· Stamp fabrication for NIL​

※ Compatible Developer: ma-D 525 (TMAH​​ based)

                             ma-D 331 or 332 (NaOH based)​​​