​Negative Photore​sists for Single Layer Lift-off Processes

▷​ Material Attributes​

·​ ​​Negative tone, chemically amplified resists

·​ 1 to 5 µm film thickness range

·​ i-Line/Broadband sensitivity, 1:1 aspect ratio capability

·​ Adjustable sidewall profile angle

·​ Aqueous alkaline development (standard 0.26N TMAH developers)

·​ Suitable for metal evaporation physical vapor deposition processes

·​ Pattern thermal stability up to 200°C

·​ Clean removal with standard photoresist removal chemistries

·​ Suitable as top imaging resist in bi-layer lift-off processes